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RF/mm-Wave GaN Power Amplifier Design Engineer

Falcomm · Atlanta, Georgia, United States

RF/mm-Wave GaN Power Amplifier Design Engineer is open at Falcomm in Atlanta, Georgia, United States. The posting gives a salary of $160K - $225K. Posted on Jul 14, 2026, and still on Falcomm’s careers page when we last checked, on Nov 15, 2026.

About the role

Falcomm designs energy-efficient power amplifier ICs and turns semiconductor innovation into products customers can build on. Our GaN and CMOS power amplifiers serve satellite communications, aerospace and wireless markets, and we combine deep RF design expertise with an AI-driven design platform to move from specification to finished product faster. As an RF/mm-Wave GaN Power Amplifier Design Engineer, you will…

The opening lines of the posting. The rest is on Falcomm’s careers page.

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